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SWCS049F 데이터시트(PDF) 12 Page - Texas Instruments

부품명 SWCS049F
상세설명  TPS65911 Integrated Power Management Unit Top Specification
PDF  144 Pages
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제조업체  TI [Texas Instruments]
홈페이지  http://www.ti.com
Logo TI - Texas Instruments

SWCS049F 데이터시트(HTML) 12 Page - Texas Instruments

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12
TPS65911
SWCS049S – JUNE 2010 – REVISED AUGUST 2018
www.ti.com
Submit Documentation Feedback
Product Folder Links: TPS65911
Specifications
Copyright © 2010–2018, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
I/O supplied from VRTC, but can be driven from VCC7 or to VCC7 voltage level.
(3)
Input supplied from VRTC, but can be driven from VCC7 voltage level.
5
Specifications
5.1
Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Voltage range on
pins
VCC1, VCC2, VCCIO, VCC3, VCC4, VCC5, VCC7, VBACKUP,
V5IN, TRIP
–0.3
7
V
VCC6
–0.3
3.6
VDDIO
–0.3
3.6
VBST
–0.3
37
SW
–5
30
SW1, SW2, SWIO
–0.3
7
VFB1, VFB2, VFBIO
–0.3
3.6
VOUT, VFB
–0.3
7
OSC32KIN, OSC32KOUT, BOOT1
–0.3
VRTCMAX + 0.3
SDA_SDI, SCL_SCK, EN2, EN1, SLEEP, INT1, CLK32KOUT,
NRESPWRON
–0.3
VDDIOMAX + 0.3
PWRON
–0.3
7
PWRHOLD, GPIO0
–0.3
7
Voltage range on
pins
GPIO1, GPIO2, GPIO3, GPIO4, GPIO5, GPIO6, GPIO7, GPIO8(2)
–0.3
7
V
HDRST
–0.3
7
NRESPWRON2(2)
–0.3
7
PWRDN(3)
–0.3
7
VCCS
–0.3
7
Peak output current on all other pins than power resources
–5
5.0
mA
Functional junction temperature
–45
150
°C
Storage temperature, Tstg
–65
150
°C
(1)
JEDEC document JEP155 statues that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP155 statues that 250-V HBM allows safe manufacturing with a standard ESD control process.
5.2
ESD Ratings
VALUE
UNIT
VESD
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS001(1)
±2000
V
Charged device model (CDM), per JESD22-C101(2)
±500



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