25CSM04

DS20005817D-page 4

 2019-2022 Microchip Technology Inc. and its subsidiares

1.0

ELECTRICAL CHARACTERISTICS

Storage temperature ...............................................................................................................................-65°C to +155°C

Ambient temperature under bias.............................................................................................................-40°C to +125°C

ESD protection on all pins ..........................................................................................................................................4 kV

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

TABLE 1-1:

DC CHARACTERISTICS

DC CHARACTERISTICS

Param.

No.

Symbol

Characteristic

Minimum Maximum Units

Test Conditions

D001

High-Level Input Voltage

V

D002

Low-Level Input Voltage

-0.3

V

D003

Low-Level Output Voltage

—

0.4

V

D004

Low-Level Output Voltage

—

0.2

V

D005

High-Level Output Voltage

—

V

D006

Input Leakage Current

—

±1.0

µA

D007

Output Leakage Current

—

±1.0

µA

D008

Internal Capacitance

(all inputs and outputs)

—7.0

pF

D009

—3.0

mA

SO = Open

—2.0

mA

SO = Open

D010

—

3.0

mA

D011

Standby Current

—2.0

µA

—1.0

µA

Note 1: This parameter is not tested but ensured by characterization.