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MCP6V51-E/MS 데이터시트(PDF) 3 Page - Microchip Technology |
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MCP6V51-E/MS 데이터시트(HTML) 3 Page - Microchip Technology |
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3 / 50 page ![]() 2018-2022 Microchip Technology Inc. and its subsidiaries DS20006136B-page 3 MCP6V51/2/4 1.0 ELECTRICAL CHARACTERISTICS 1.1 Absolute Maximum Ratings† VDD – VSS ...............................................................................................................................................................49.5V Current at Input Pins (Note 1).................................................................................................................................±5 mA Analog Inputs (VIN+ and VIN-)...................................................................................................VSS – 0.5V to VDD + 0.5V All Other Inputs and Outputs ....................................................................................................VSS – 0.3V to VDD + 0.3V Differential Input Voltage (Note 1)...............................................................................................................................±9V Output Short-Circuit Current .......................................................................................................................... Continuous Current at Output and Supply Pins ......................................................................................................................±50 mA Storage Temperature .............................................................................................................................-65°C to +150°C Maximum Junction Temperature .......................................................................................................................... +150°C ESD Protection on All Pins (HBM, CDM, MM) 2 kV, 750V, 200V Note 1: The inputs are clamped by internal back-to-back diodes. If differential input voltages exceed ±9V, the current must be limited to 5 mA or less. Also, see Section 4.2.1 “Input Protection”. 1.2 Electrical Specifications † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +4.5V to +45V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 100 pF (refer to Figure 1-4 and Figure 1-5). Parameters Sym. Min. Typ. Max. Units Conditions Input Offset Input Offset Voltage VOS -15 ±2.4 +15 µV TA = +25°C Input Offset Voltage Drift with Temperature (Linear Temp. Co.) TC1 -31 ±5 +31 nV/°C TA = -40 to +125°C, VDD = 4.5V (Note 1) TC1 -36 ±7 +36 nV/°C TA = -40 to +125°C, VDD = 45V (Note 1) Input Offset Voltage Quadratic Temperature Co. TC2 — ±42 — nV/ °C2 TA = -40 to +125°C, VDD = 4.5V TC2 — ±38 — nV/ °C2 TA = -40 to +125°C, VDD = 45V Input Offset Voltage Aging ∆VOS — ±2 — µV 408 hours Life Test at +150°C, measured at +25°C Power Supply Rejection Ratio PSRR 134 160 — dB 124 138 — dB TA = -40°C to +125°C, VDD = 45V (Note 1) Note 1: Not production tested. Limits set by characterization and/or simulation and provided as design guidance only. 2: Figure 2-17 shows how VCML and VCMH changed across temperature for the first production lot. |
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