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MCP6V51-E/MS 데이터시트(PDF) 3 Page - Microchip Technology

부품명 MCP6V51-E/MS
상세설명  45V, 2 MHz Zero-Drift Op Amp with EMI Filtering
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제조업체  MICROCHIP [Microchip Technology]
홈페이지  http://www.microchip.com
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MCP6V51-E/MS 데이터시트(HTML) 3 Page - Microchip Technology

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2018-2022 Microchip Technology Inc. and its subsidiaries
DS20006136B-page 3
MCP6V51/2/4
1.0
ELECTRICAL CHARACTERISTICS
1.1
Absolute Maximum Ratings†
VDD – VSS ...............................................................................................................................................................49.5V
Current at Input Pins
(Note 1).................................................................................................................................±5 mA
Analog Inputs (VIN+ and VIN-)...................................................................................................VSS – 0.5V to VDD + 0.5V
All Other Inputs and Outputs ....................................................................................................VSS – 0.3V to VDD + 0.3V
Differential Input Voltage
(Note 1)...............................................................................................................................±9V
Output Short-Circuit Current .......................................................................................................................... Continuous
Current at Output and Supply Pins ......................................................................................................................±50 mA
Storage Temperature .............................................................................................................................-65°C to +150°C
Maximum Junction Temperature .......................................................................................................................... +150°C
ESD Protection on All Pins (HBM, CDM, MM)  2 kV, 750V, 200V
Note 1: The inputs are clamped by internal back-to-back diodes. If differential input voltages exceed ±9V, the current
must be limited to 5 mA or less. Also, see
Section 4.2.1 “Input Protection”.
1.2
Electrical Specifications
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above
those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +4.5V to +45V, VSS = GND,
VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 100 pF (refer to Figure 1-4 and Figure 1-5).
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input Offset
Input Offset Voltage
VOS
-15
±2.4
+15
µV
TA = +25°C
Input Offset Voltage Drift with
Temperature (Linear Temp. Co.)
TC1
-31
±5
+31
nV/°C TA = -40 to +125°C,
VDD = 4.5V (Note 1)
TC1
-36
±7
+36
nV/°C TA = -40 to +125°C,
VDD = 45V (Note 1)
Input Offset Voltage Quadratic
Temperature Co.
TC2
—
±42
—
nV/
°C2
TA = -40 to +125°C,
VDD = 4.5V
TC2
—
±38
—
nV/
°C2
TA = -40 to +125°C,
VDD = 45V
Input Offset Voltage Aging
∆VOS
—
±2
—
µV
408 hours Life Test at
+150°C,
measured at +25°C
Power Supply Rejection Ratio
PSRR
134
160
—
dB
124
138
—
dB
TA = -40°C to +125°C,
VDD = 45V (Note 1)
Note 1: Not production tested. Limits set by characterization and/or simulation and provided as design guidance
only.
2: Figure 2-17 shows how VCML and VCMH changed across temperature for the first production lot.



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