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STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60

ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 7: Dynamic

Table 8: Source Drain Diode

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(2) Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Forward Transconductance

1

S

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

156

23.5

3.8

pF

pF

pF

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

(Resistive Load see, Figure

21)

6.5

5

19

25

ns

ns

ns

ns

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

(see, Figure 23)

7

1.1

3.7

10

nC

nC

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Source-drain Current

Source-drain Current (pulsed)

1

4

A

A

Forward On Voltage

1.6

V

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

(see test circuit, Figure 22)

140

240

3.3

ns

µC

A

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

(see test circuit, Figure 22)

229

377

3.3

ns

µC

A