Nexperia

MJD41C

100 V, 6 A NPN high power bipolar transistor

5. Pinning information

Table 2. Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

B

base

2

C

collector

3

E

emitter

mb

C

mounting base; connected

to collector

3

2

mb

1

DPAK (SOT428C)

aaa-029889

C; mb

E

B

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

MJD41C

DPAK

Plastic single-ended surface-mounted package (DPAK); 3

leads (one lead cropped)

SOT428C

7. Marking

Table 4. Marking codes

Type number

Marking code

MJD41C

MJD41C

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC601134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-emitter voltage open base

-

100

V

emitter-base voltage

open collector

-

6

V

collector current

-

6

A

peak collector current

-

10

A

[1]

-

15

W

total power dissipation

[2]

-

1.6

W

junction temperature

-

150

°C

ambient temperature

-55

150

°C

storage temperature

-65

150

°C

[1] Total power dissipation junction to mounting base.

MJD41C

All information provided in this document is subject to legal disclaimers.

Product data sheet

10 May 2021

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