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FXLS8964AF 데이터시트(PDF) 7 Page - NXP Semiconductors

부품명 FXLS8964AF
상세설명  3-Axis Low-g Accelerometer
PDF  98 Pages
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제조업체  NXP [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo NXP - NXP Semiconductors

FXLS8964AF 데이터시트(HTML) 7 Page - NXP Semiconductors

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NXP Semiconductors
FXLS8964AF
3-Axis Low-g Accelerometer
Symbol
Rating
Min
Unit
VHBM
Human Body Model
±2000
V
VCDM
Charged Device Model
±500
V
ILU
Latch-up current at T = +105 °C (per AEC-Q100-004)
±100
mA
Table 5. ESD and latch-up-protection characteristics
CAUTION
This device is sensitive to mechanical shock. Improper handling can cause permanent damage to the
part or cause the part to otherwise fail.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent
standards.
8 Recommended operating conditions
Symbol
Parameter
Min
Typ
Max
Unit
VDD
Supply voltage
1.71
3.0
3.6
V
Top
Operating temperature range
–40
+25
+105
°C
Table 6. Nominal operating conditions
9 Mechanical characteristics
VDD = 1.8 V to 3.0 V, T = –40 °C to 105 °C, unless otherwise noted.
Typical values represent mean or mean ±1 σ values, depending on the specific parameter.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
nACC
Output data width
12
bits
±2 g mode
±2
±4 g mode
±4
±8 g mode
±8
FSR
Full-scale measurement range
±16 g mode
±16
g
Table 7. Accelerometer sensor performance parameters
FXLS8964AF
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2021. All rights reserved.
Product data sheet
Rev. 3.4 — 7 December 2021
7 / 98



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