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MIP502 데이터시트(PDF) 1 Page - Panasonic Semiconductor |
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MIP502 데이터시트(HTML) 1 Page - Panasonic Semiconductor |
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1 / 3 page ![]() Intelligent Power Devices (IPDs) MIP501, MIP502 MIP501, MIP502 Silicon MOS IC s Features q High breakdown voltage, N-Ch MOS FET output (VDSS > 40V Ron < 0.5Ω) q Over-current-protection function built-in q Reset function built-in q Direct drive possible by the logic circuit s Applications q Lamp drive s Absolute Maximum Ratings (Ta= 25˚C) MIP501 Unit : mm s Block Diagram Parameter Output breakdown voltage Output peak current Output current Input voltage Input current Allowable power MIP501 dissipation MIP502 Junction temperature Storage temperature Operating temperature Symbol VDSS IOP IOA VIN IIN PD Tj Tstg Topr Rating 40 5 1.7 – 0.5 to 6 ±10 1.5 1 * 150 – 55 to +150 – 40 to + 85 Unit V A A V mA W ˚C ˚C ˚C * The value at mounted on PCB (glass epoxy resin: 100 ×100mm). (For MIP502 only) 1 : IN 2 : Drain 3 : Source MT3 Type Package MIP502 Unit : mm 1 : Source 2 : Drain 3 : IN TO-92NL Type Package Over voltage protection circuit Over current protection circuit Reset circuit 1 SOURCE 3 IN 2 DRAIN 7.5 ±0.2 4.5 ±0.2 90 ° 0.8C 0.8C 0.4 ±0.1 0.8C 123 0.5 ±0.1 0.7 ±0.1 1.0 ±0.1 0.85 ±0.1 0.65 ±0.1 0.65 ±0.1 2.5 ±0.2 2.5 ±0.2 2.05 ±0.2 5.0 ±0.2 1.27 123 1.27 4.0 ±0.2 0.45 +0.15 -0.1 0.45 +0.15 -0.1 0.7 ±0.1 2.54 ±0.15 |
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