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QPD1016LEVB01 데이터시트(PDF) 1 Page - Qorvo, Inc |
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QPD1016LEVB01 데이터시트(HTML) 1 Page - Qorvo, Inc |
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1 / 24 page ![]() QPD1016L DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor Datasheet Rev. A, September 2020 | Subject to change without notice - 1 of 23 - www.qorvo.com NI-780 Package Product Overview The Qorvo QPD1016L is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support pulsed and linear operations. ROHS compliant. Evaluation boards are available upon request. Functional Block Diagram Key Features • Frequency: DC to 1.7 GHz • Output Power (P3dB): 537 W • Linear Gain: 18 dB • Typical Drain Efficiency at 3 dB compresion: 67% • Operating Voltage: 50 V • CW and Pulse capable Applications • IFF • Avionics • Military and civilian radar • Test instrumentation Ordering info Part No. Description QPD1016L DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor QPD1016LS1 Sample bag – 1 piece QPD1016LS2 Sample bag – 2 piece QPD1016LEVB01 1.2 – 1.4 GHz EVB |
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