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14N65L-TQ2-R 데이터시트(PDF) 3 Page - Unisonic Technologies |
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14N65L-TQ2-R 데이터시트(HTML) 3 Page - Unisonic Technologies |
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3 / 9 page ![]() 14N65-TC Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 9 www.unisonic.com.tw QW-R205-452.C ABSOLUTE MAXIMUM RATINGS (T C = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID 14 A Pulsed (Note 2) IDM 28 A Avalanche Energy Single Pulsed (Note 3) EAS 530 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.2 V/ns Power Dissipation TO-220F/TO-220F1 TO-220F3 PD 50 W TO-263 235 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L = 60mH, IAS = 4.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 14A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220F/TO-220F1 TO-220F3 θJC 2.5 °C/W TO-263 0.53 °C/W |
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