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RA4M2 데이터시트(PDF) 71 Page - Renesas Technology Corp

부품명 RA4M2
상세설명  Leading-performance 100 MHz Arm Cortex-M33 core, up to 512 KB code flash memory with background operation, 8 KB Data flash memory, and 128 KB SRAM with Parity/ECC.
PDF  92 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RA4M2 데이터시트(HTML) 71 Page - Renesas Technology Corp

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VCC
tVOFFBATT
VDETBATT
VBATTSW
VBATT
VCC supply
VBATT supply
VCC supply
Backup power
area
Figure 2.60
Battery backup function characteristics
VBATT
tBATTOFF
Vbattldet
VBATTMON
tBATTdet
tBATTdet
VBATTMNSEL
td(E-A)
Figure 2.61
Battery backup function characteristics
2.11
CTSU Characteristics
Table 2.43
CTSU characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
External capacitance connected to TSCAP pin
Ctscap
9
10
11
nF
—
TS pin capacitive load
Cbase
—
—
50
pF
—
Permissible output high current
ΣIoH
—
—
-40
mA
When the mutual capacitance
method is applied
2.12
Flash Memory Characteristics
2.12.1
Code Flash Memory Characteristics
Table 2.44
Code flash memory characteristics (1 of 2)
Conditions: Program or erase: FCLK = 4 to 50 MHz
Read: FCLK ≤ 50 MHz
Parameter
Symbol
FCLK = 4 MHz
20 MHz ≤ FCLK ≤ 50 MHz
Unit
Test
conditions
Min
Typ*6 Max Min
Typ*6
Max
Programming time
NPEC ≤ 100 times
128-byte
tP128
—
0.75
13.2 —
0.34
6.0
ms
8-KB
tP8K
—
49
176
—
22
80
ms
32-KB
tP32K
—
194
704
—
88
320
ms
RA4M2 Datasheet
2. Electrical Characteristics
R01DS0367EJ0110 Rev.1.10
Jan 27, 2021
Page 71 of 92



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