TF20N06 datasheet(1/6 Pages) TUOFENG

부품명	TF20N06

상세설명	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	6 Pages

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제조업체	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

홈페이지	http://www.sztuofeng.com/?lang=en

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1 / 6 page

TF

20N06

N-Channel Enhancement Mode Power MOSFET

General Features

●

VDS =60V,ID =20A

RDS(ON) <35mΩ @ VGS=10V

●

High density cell design for ultra low Rdson

●

Fully characterized avalanche voltage and current

●

Good stability and uniformity with high EAS

●

Excellent package for good heat dissipation

●

Special process technology for high ESD capability

Application

●

Power switching application

●

Hard switched and high frequency circuits

●

Uninterruptible power supply

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

20

A

Drain Current-Continuous(TC=100℃)

ID (100℃)

14

A

Pulsed Drain Current

IDM

60

A

Maximum Power Dissipation

PD

45

W

Derating factor

0.3

W/℃

Single pulse avalanche energy

(Note 5)

EAS

72

mJ

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 175

℃

Shenzhen Tuofeng Semiconductor Technology Co., Ltd

N -CHANNEL ENHANCEMENT MODE POWER MOSFET

Fe ,2018 V1.1

1

D

G

S

TO-252

20N06

TFYWCP

MARKING

Equivalent Circuit

Y :year code W :week code

G

S

D

RDS(ON) <40mΩ @ VGS= 4.5V

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TF20N06 데이터시트(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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