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2SC2235 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 2SC2235
상세설명  isc Silicon NPN Power Transistor
PDF  3 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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1
isc Silicon NPN Power Transistor
2SC2235
DESCRIPTION
·
Collector-Emitter Breakdown Voltage
:VCEO= 120V(Min)
·
DC Current Gain
: hFE= 80-240@ (VCE= 5V, IC= 0.1A)
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
TV Horizontal Deflection Output Application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
0.8
A
PC
Collector Power Dissipation
@ TC=25℃
900
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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