FEATURES

MECHANICAL DATA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

S3DB S3GB S3JB S3KB S3MB

Maximumrecurrent peak reverse voltage

200

400

600

800

1000

V

MaximumRMS voltage

140

280

420

560

700

V

MaximumDCBlocking Voltage

200

400

600

800

1000

V

Maximumaverage forword rectified current

O

C

A

Peak forward surge current @ T

A

MaximumInstantaneous forward voltage at 3.0 A

V

MaximumDCreverse current

@T

o

C

at rated DCblockjing voltage @T

o

C

Typical junction capacitance

pF

JA

Operating junction and storage temperature range

Terminals:Solder plated, solderable per MIL-STD-

DO- 214AA(SMB)

Polarity: Color band denotes cathode end

Weight: 0.003 ounces, 0.093 gram

3.0

50

100.0

2. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas

35

Typical thermal resitance (NOTE 2)

100.0

1.15

-55--------+150

10.0

NOTE: 1.Measured at 1.0MHz and applied reverse voltage of 4.0 Volts

100

35

70

Plastic package has underwriters laboratory

100

For surface mounted applications

50

S3BB

UNITS

Glass passivated chip junction

S3AB --- S3MB

CURRENT: 3.0 A

Built-in strain relief,ideal for automated placement

Case:JEDEC DO-214AA,molded plastic over

High temperature soldering:

Low profile package

S3AB

www.diode.co.kr

1.

inch(mm)

40

R

SAMYANG ELECTRONICS

SAM YANG

PLASTIC SILICON RECTIFIER