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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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HM2907 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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HM2907 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor HM2907 FEATURES · Drain Current : ID= 180A@ TC=25℃ · Drain Source Voltage : VDSS= 80V(Min) · Static Drain-Source On-Resistance : RDS(on) = 4.5mΩ(Max) @ VGS= 10V · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage ± 25 V ID Drain Current-Continuous@TC=25℃ 180 A PD Total Dissipation 250 W Tch Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.5 ℃ /W |
유사한 부품 번호 - HM2907 |
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유사한 설명 - HM2907 |
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