NAND01G-B2C datasheet(33/67 Pages) NUMONYX

부품명	NAND01G-B2C

상세설명	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

PDF	67 Pages

Scroll/Zoom	100%

제조업체	NUMONYX [Numonyx B.V]

홈페이지	http://www.numonyx.com

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NAND01G-B2C

Device operations

33/67

6.8

Read electronic signature

The device contains a manufacturer code and device code. To read these codes three steps

are required:

One bus write cycle to issue the Read Electronic Signature command (90h)

One bus write cycle to input the address (00h)

Four bus read cycles to sequentially output the data (as shown in Table 12: Electronic

signature).

Table 12.

Electronic signature

Part number

byte/word 1

byte/word 2

byte/word 3

(see Table 13)

byte/word 4

(see Table 14)

Manufacturer

code

Device code

NAND01GR3B2C

20h

A1h

00h

15h

NAND01GW3B2C

F1h

1Dh

NAND01GR4B2C

B1h

55h

NAND01GW4B2C

C1h

5Dh

Table 13.

Electronic signature byte 3

I/O

Definition

Value

Description

I/O1-I/O0

Internal chip number

0 0

0 1

1 0

1 1

Reserved

I/O3-I/O2

Cell type

0 0

0 1

1 0

1 1

Single level cell

2x multilevel cell

Reserved

I/O5-I/O4

Number of simultaneously

programmed pages

0 0

0 1

1 0

1 1

I/O6

Interleaved programming

between multiple devices

Not supported

Supported

I/O7

Cache program

Not supported

Supported

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