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SMBJH 데이터시트(PDF) 4 Page - Taiwan Semiconductor Company, Ltd |
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SMBJH 데이터시트(HTML) 4 Page - Taiwan Semiconductor Company, Ltd |
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4 / 8 page ![]() SMBJH SERIES Taiwan Semiconductor 4 Version: A2102 ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) Part number Marking code Breakdown voltage VBR@IT (V) (Note 1) Test current IT (mA) Working stand-off voltage VWM (V) Maximum blocking leakage current ID@VWM (µA) Maximum peak impulse current IPP (A) (Note 2) Maximum clamping voltage VC@IPP (V) Min Max SMBJ170AH PR 189 209 1 170 1 2.2 275 Notes: 1. VBR measure after IT applied for 30ms, IT=square wave pulse or equivalent. 2. Surge current waveform per Figure. 3 and derate per Figure. 2. 3. All terms and symbols are consistent with ANSI/IEEE C62.35. 4. For bidirectional use CH or CAH suffix for types SMBJ5.0H - SMBJ170H 5. For bipolar types having VWM of 10V (SMBJ10CH) and under, the ID limit is doubled. ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING SMBJxH DO-214AA (SMB) 3,000 / Tape & Reel Notes: 1. "x" defines voltage from 5V(SMBJ5.0H) to 170V(SMBJ170AH) |
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