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ATO25F1GC-30EC 데이터시트(PDF) 40 Page - List of Unclassifed Manufacturers |
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ATO25F1GC-30EC 데이터시트(HTML) 40 Page - List of Unclassifed Manufacturers |
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40 / 46 page ![]() 40/46 Sep.2013. Rev 0.5 1Gbit Serial NAND Flash Memory Table 13. DC characteristics Symbol Parameter Test condition (in addition to those in Table9) Min. Max. Unit ILI Input leakage current ± 2 µA ILO Output leakage current ± 2 µA ICC1 Standby current CS# = VCC, VIN = VSS or VCC 1 50 µA ICC2 Deep Power-down current CS# = VCC, VIN = VSS or VCC 1 15 µA ICC3 Operating current (READ) SCLK = 0.1VCC / 0.9.VCC at 104 MHz, Q = open 10 20 mA SCLK = 0.1VCC / 0.9.VCC at 33 MHz, Q = open 8 12 mA ICC4 Operating current (Program) CS# = VCC 10 20 mA ICC5 Operating current (Block Erase) CS# = VCC 10 20 mA VIL Input low voltage -0.5 0.2xVCC V VIH Input high voltage 0.8xVCC Vcc + 0.4 V VOL Output low voltage IOL = 1.6mA 0.2 V VOH Output high voltage IOH = –100 µA VCC – 0.2 V |
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