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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SI3232 데이터시트(PDF) 11 Page - Silicon Laboratories |
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SI3232 데이터시트(HTML) 11 Page - Silicon Laboratories |
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11 / 128 page  Si3232 Preliminary Rev. 0.96 11 Table 6. Monitor ADC Characteristics (VDD, VDD1–VDD4 = 3.13 to 3.47 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade) Parameter Symbol Test Condition Min Typ Max Unit Resolution — 8 — Bits Differential Nonlinearity DNL — –1.0 ±0.75 — — +1.5 LSB LSB Integral Nonlinearity INL — ±0.6 ±1.5 LSB Gain Error — ±0.1 ±0.25 LSB Table 7. Si3200 Characteristics (VDD = 3.13 to 3.47 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade) Parameter Symbol Test Condition Min Typ Max Unit TIP/RING Pulldown Transistor Saturation Voltage VCM VRING – VBAT (Forward), VTIP – VBAT (Reverse) ILIM =22mA, IABIAS =4mA1 ILIM =45mA, IABIAS =16mA1 ⎯ ⎯ 3 4 ⎯ — V V TIP/RING Pullup Transistor Saturation Voltage VOV GND – VTIP (Forward) GND – VRING (Reverse) ILIM =22mA1 ILIM =45mA1 ⎯ ⎯ 3 4 ⎯ — V V Battery Switch Saturation Impedance RSAT (VBAT – VBATH)/IOUT (Note 2) ⎯ 15 ⎯ W OPEN State TIP/RING Leakage Current ILKG RL =0 Ω⎯ ⎯ 100 µA Internal Blocking Diode Forward Voltage VF VBAT – VBATL (Note 2) ⎯ 0.8 ⎯ V Notes: 1. VAC = 2.5 VPK, RLOAD = 600 Ω. 2. IOUT =60mA |
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