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STGAP2HSMTR 데이터시트(PDF) 5 Page - STMicroelectronics |
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STGAP2HSMTR 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 22 page ![]() 4 Electrical characteristics Table 5. Electrical characteristics (TJ = 25°C, VH = 15 V, VDD = 5 V unless otherwise specified) Symbol Pin Parameter Test conditions Min. Typ. Max. Unit Dynamic charact eristics tDon IN+, IN- Input to output propagation delay ON - 50 75 90 ns tDoff IN+, IN- Input to output propagation delay OFF - 50 75 90 ns tr - Rise time CL = 4.7 nF See Figure 13 - 30 - ns tf - Fall time - 30 - ns PWD - Pulse Width Distortion |tDon-tDoff| - - - 20 ns tdeglitch IN+, IN- Inputs deglitch filter - - 20 40 ns CMTI (1) - Common-mode transient immunity, |dVISO/dt| VCM = 1500 V, See Figure 12 100 - - V/ns Supply voltage VHon - VH UVLO turn-on threshold - 8.6 9.1 9.6 V VHoff - VH UVLO turn-off threshold - 7.9 8.4 8.9 V VHhyst - VH UVLO hysteresis - 600 750 950 mV IQHU - VH undervoltage quiescent supply current VH = 7V - 1.3 1.8 mA IQH - VH quiescent supply current - - 1.3 1.8 mA IQHSBY - Standby VH quiescent supply current Standby mode - 400 550 µA SafeClp - GOFF active clamp IGOFF = 0.2 A; VH floating - 2 2.3 V IQDD - VDD quiescent supply current - - 1.0 1.3 mA IQDDSBY - Standby VDD quiescent supply current Standby mode - 40 65 µA Logic Inputs Vil IN+, IN- Low level logic threshold voltage - 0.29·VDD 0.33·VDD 0.37·VDD V Vih IN+, IN- High level logic threshold voltage - 0.62·VDD 0.66·VDD 0.70·VDD V IINh IN+, IN- INx logic “1” input bias current INx = 5 V 33 50 70 µA IINl IN+, IN- INx logic “0” input bias current INx = GND - - 1 µA Rpd IN+, IN- Inputs pull-down resistors INx = 5 V 70 100 150 kΩ Driver buffer section IGON - Source short circuit current TJ = 25°C - 4 - A TJ = -40 to +125°C (1) 3 - 5 A VGONH - Source output high level voltage IGON = 100 mA VH-0.15 VH-0.125 - V STGAP2HS Electrical characteristics DS13393 - Rev 5 page 5/22 |
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