Item

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature

Symbol

VDD

VGG

+12

-7

-55 to +125

V

V

Input Power

Pin

+15

dBm

°C

Tstg

Operating Backside Temperature

-40 to +85

°C

Top

Condition

Unit

Rating

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25

°C)

Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:

1. The drain-source operating voltage (VDD) should not exceed 10 volts.

2. The drain-source operating voltage (VGG) should not exceed -5 volts.

1

Edition 1.0

October 2001

Item

Symbol

Conditions

Unit

Limits

Typ.

Max.

Min.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25

°C)

Linear Gain (Note 1)

30.0

33.0

-

-

dB

--

2500

mA

Output Power

39.0

41.0

-

dBm

-70

-

mA

Drain Current

-

4000

-mA

IDD

IGG

IDD(DC)

VDD1,2 = 10V

f = 2.2GHz

Pin = 12dBm

Without RF

Note 1 Pin

≤-6dBm

Gate Current

DC Input Current

DESCRIPTION

The FMM5049VT is a high-gain, wide band, three-stage MMIC

amplifier designed for PCS/PCN and W-CDMA applications as a driver

or output stage in the 1.8-2.3GHz band. The output stage is partially

matched for this device. This product is uniquely suited for use in

base station amplifiers as it offers high gain, long term reliability and

ease of use.

FEATURES

• High Output Power: Pout = 41.0dBm (Typ.)

• High Linear Gain: GL = 33.0dB (Typ.)

• Broad Band: 1.8 to 2.3GHz

• Hermetically Sealed Package

FMM5049VT

Power Amplifier MMIC