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RHFOSC04K02V 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 RHFOSC04K02V
상세설명  Rad-hard, crystal oscillator driver and divider
PDF  16 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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RHFOSC04K02V 데이터시트(HTML) 4 Page - STMicroelectronics

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3
Radiations
Total dose (MIL-STD-883 TM 1019):
The products guaranteed in radiation within the RHA QML-V system fully comply with the MIL-STD-883 TM 1019
specification.
The RHFOSC04 is RHA QML-V, tested and characterized in full compliance with the MIL-STD-883 specification,
between 50 and 300 rad/s only (full CMOS technology).
All parameters provided in Table 5. DC electrical characteristics and Table 6. AC electrical characteristics apply to
both pre- and post-irradiation, as follows:
•
All tests are performed in accordance with MIL-PRF-38535 and test method 1019 of MIL-STD-883 for total
ionizing dose (TID)
•
The initial characterization is performed in qualification only on both biased and unbiased parts
•
Each wafer lot is tested at high dose rate only, in the worst bias case condition, based on the results
obtained during the initial qualification
Heavy ions:
The behavior of the product, when submitted to heavy ions, is not tested in production. Heavy-ion trials are
performed on qualification lots only.
Table 4. Radiations
Symbol
Characteristics
Value
Unit
TID (1)
High-dose rate (50 to 300 rad (Si) per second)
300
krad
SEL (2)
Performed at 125°C with a particle angle of 60°
and a fluence of 1 x 107 n/cm2 (10 millions of particles per cm²)
125
MeV.cm²/mg
Performed at 125°C with a particle angle of 0°
and a fluence of 1 x 107 n/cm2 (10 millions of particles per cm²)
62
SET (3)
Performed at 25°C
125
1. A total ionizing dose (TID) of 300 krad(Si) is equivalent to 3000 Gy(Si), (1 gray = 100 rad).
2. SEL: single event latch-up.
3. SET: single event transient.
RHFOSC04
Radiations
DS13330 - Rev 1
page 4/16



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