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STPSC10065D 데이터시트(PDF) 1 Page - STMicroelectronics

부품명 STPSC10065D
상세설명  650 V, 10 A low VF power Schottky silicon carbide diode
PDF  13 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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background image
K
A
TO-220AC
K
A
K
D²PAK HV
K
NC
A
A
Features
•
No or negligible reverse recovery
•
Switching behavior independent of temperature
•
Dedicated to PFC applications
•
High forward surge capability
•
Operating Tj from -40 °C to 175 °C
•
D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
•
ECOPACK2 compliant component
Applications
•
DC/DC converter
•
High frequency inverter
•
Snubber
•
Boost PFC function
Description
This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode. It is
manufactured using a silicon carbide substrate. The wide band gap material allows
the design of a Schottky diode structure with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and ringing patterns are negligible. The
minimal capacitive turn-off behavior is independent of temperature.
Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in
charging station, DC/DC, easing the compliance to IEC-60664-1.
Product label
Product status link
STPSC10065
Product summary
Symbol
Value
IF(AV)
10 A
VRRM
650 V
Tj (max.)
175 °C
VF (typ.)
1.30 V
650 V, 10 A low VF power Schottky silicon carbide diode
STPSC10065
Datasheet
DS12185 - Rev 3 - March 2021
For further information contact your local STMicroelectronics sales office.
www.st.com


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