STPSC20065 datasheet(3/13 Pages) STMICROELECTRONICS

전자부품 데이터시트 검색엔진

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STPSC20065 데이터시트(PDF) 3 Page - STMicroelectronics

부품명	STPSC20065

상세설명	650 V power Schottky silicon carbide diode

PDF	13 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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3 / 13 page

STPSC20065

Characteristics

DocID029246 Rev 2

3/13

To evaluate the conduction losses use the following equation:

P = 1.02 x IF(AV) + 0.039 x IF2(RMS)

Table 5: Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

QCj(1)

Total capacitive charge

VR = 400 V

Total capacitance

VR = 0 V, Tc = 25 °C, F = 1 MHz

1250

VR = 400 V, Tc = 25 °C, F = 1 MHz

100

Notes:

(1)Most accurate value for the capacitive charge:

�� = ∫

��(��)

��

．

��

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