N Channel MOSFET

M02N60

2.0A

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃）

*Pulse Test: Pulse Width ≦300μS, Duty Cycle ≦ 2%

**Negligible, Dominated by circuit inductance

PARAMETERS

SYMBO

L

MIN

TYP

MAX UNIT

CONDITION

Drain-Source Breakdown Voltage

600

Vdc

Drain-Source Leakage Current

0.1

1.0

mA

mA

Gate-Source Leakage Current-

Forward

100

nA

Gate Threshhold Voltage

2.0

4.0

V

Drain-Source On-Resistance

4.4

Ohm

Input Capacitance

435

pF

Output Capacitance

56

pF

Reverse Transfer Capacitance

9.2

pF

Turn-On Delay Time

12

nS

Turn-Off Delay Time

30

nS

Rise Time

21

nS

Fall Time

24

nS

Total Gate Charge

13

22

nC

Gate-Drain Charge

6.0

nC

Gate-Drain Charge

2.0

nC

Intemal Drain Inductance

4.5

nH

Measured from the drain lead

0.25’’ From package to center

of die

Internal Drain Inductance

Ls

7.5

nH

Measured from the sorce lead

0.25’’ form package to source

bond pad

SOURCE-DRAIN DIODE CHARACTERISTICS

Forward On-Voltage(1)

VDS

1.5

V

Forward Tum Time

ton

**

nS

Reverse Recovery Time

trr

340

nS

Is=2.0A, VGS=0V

STANSON TECHNOLOGY

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