| 전자부품 데이터시트 검색엔진 |
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ST3413 데이터시트(PDF) 2 Page - Stanson Technology |
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ST3413 데이터시트(HTML) 2 Page - Stanson Technology |
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2 / 7 page ![]() P Channel Enhancement Mode MOSFET ST3413 -3.4A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS +/-12 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID -2.8 -2.0 A Pulsed Drain Current IDM -8 A Continuous Source Current (Diode Conduction) IS -1.4 A Power Dissipation TA=25℃ TA=70℃ PD 0.33 0.21 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 105 ℃/W Page 2 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 |
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