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ESDA8P30-1T2 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 ESDA8P30-1T2
상세설명  Small transient voltage suppressor
PDF  11 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ESDA8P30-1T2 데이터시트(HTML) 3 Page - STMicroelectronics

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1.1
Characteristics (curves)
Figure 2. Peak pulse power dissipation versus initial
junction temperature (typical value)
200
300
400
25
50
75
100
125
150
175
PPP (W)
Tj( °C)
8/20µs
typical value
Figure 3. Peak pulse power versus exponential pulse
duration (maximum values)
10
100
1000
10
100
1000
PPP (W)
tp(µs)
Tj initial = 25 °C
typical value
Figure 4. Peak power dissipation versus initial
temperature (typical value)
0.1
1
10
100
7
8
9
10
11
12
8/20µs
Tj initial = 25 °C
Ipp (A)
VCL (V)
Figure 5. Leakage current versus junction temperature
(typical value)
Ir (nA)
Tj(°C)
0
200
400
600
800
1000
1200
1400
1600
0
50
100
150
200
Ir = f(Tj) at Vrm = 6.3 V(typical value)
Figure 6. ESD response to IEC 61000-4-2 (+8kV contact
discharge)
Peak clamping voltage
Clamping voltage at 30 ns
Clamping voltage at 60 ns
Clamping voltage at 100 ns
1
2
3
4
20 ns/div
5 V/div
1
28.6 V
2
8.7 V
3
8.2V
4
8.0 V
Figure 7. ESD response to IEC 61000-4-2 (-8kV contact
discharge)
20 ns/div
5 V/div
1
2
3
4
Peak clamping voltage
Clamping voltage at 30 ns
Clamping voltage at 60 ns
Clamping voltage at 100 ns
1
2
3
4
- 24 V
-1.5 V
-1.5 V
-1.0 V
ESDA8P30-1T2
Characteristics (curves)
DS12517 - Rev 3
page 3/11



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