RF2L15200CB4 datasheet(3/13 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25°C unless otherwise specified.

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, IDS = 500 µA

IDSS

Zero gate voltage drain leakage

current

VGS = 0 V, VDS = 28 V

μA

VGS = 0 V, VDS = 50 V

IGSS

Gate-source leakage current

VGS=-6/10 V, VDS=0 V

±100

VGS(th)

Gate threshold voltage

VDS = 28 V, IDS = 600 µA

1.75

2.5

VGS(Q)

Gate quiescent voltage

VDS = 1 V, IDS = 220 mA

VDS(on)

Static drain-source on-voltage

VGS = 10 V, IDS = 820 mA

150

VGS = 10 V, IDS = 2.5 A

200

365

IDS(on)

Static drain-source on-current

VGS = 10 V, VDS = 100 mV

2.5

RDS(on)

Drain-source on-state resistance

VGS = 10 V, IDS = 820 mA

VGS = 10 V, IDS = 2.5 A

CISS

Common source input capacitance

VGS = 0 V, VDD = 28 V,

f = 1 MHz

CRSS

Common source feedback

capacitance

1.6

COSS

Common source output

capacitance

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Frequency

1500

MHz

POUT

Output power

f = 860 MHz, at 3dB compression

point, CW test signal

200

GPS

Power gain

17.5

ηD

Drain efficiency

VSWR

Load mismatch

At 200 W output power, all phase

angles

10:1

Note:

VDD = 28 V, IDQ = 100 mA.

RF2L15200CB4

Electrical characteristics

DS13389 - Rev 2

page 3/13

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