| 전자부품 데이터시트 검색엔진 |
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A1P35S12M3 데이터시트(PDF) 4 Page - STMicroelectronics |
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A1P35S12M3 데이터시트(HTML) 4 Page - STMicroelectronics |
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4 / 15 page ![]() Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 35 A, VR = 600 V, VGE = ±15 V, di/dt = 1533 A/μs, TJ = 150 °C - 350 ns Qrr Reverse recovery charge - 6.6 µC Irrm Reverse recovery current - 63 A Erec Reverse recovery energy - 3.2 mJ RTHj-c Thermal resistance junction- to-case Each diode - 0.8 0.9 °C/W RTHc-h Thermal resistance case-to- heatsink Each diode, λgrease = 1 W/(m·°C) - 0.75 °C/W 1.3 NTC Table 5. NTC temperature sensor, considered as stand-alone Symbol Parameter Test conditions Min. Typ. Max. Unit R25 Resistance T = 25°C 5 kΩ R100 Resistance T = 100°C 493 Ω ΔR/R Deviation of R100 -5 +5 % B25/50 B-constant 3375 K B25/80 B-constant 3411 K T Operating temperature range -40 150 °C Figure 1. NTC resistance vs temperature GADG260720171142NTC 10 4 10 3 10 2 0 25 50 75 100 125 R (Ω) TC (°C) Figure 2. NTC resistance vs temperature, zoom GADG260720171151NTCZ 800 700 600 500 400 300 85 90 95 100 105 110 R (Ω) TC (°C) max min typ A1P35S12M3 NTC DS11635 - Rev 5 page 4/15 |
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