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AIS1200PSTR 데이터시트(PDF) 7 Page - STMicroelectronics

부품명 AIS1200PSTR
상세설명  MEMS acceleration sensor: single-axis with PSI5 point-to-point interface
PDF  21 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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AIS1200PSTR 데이터시트(HTML) 7 Page - STMicroelectronics

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DocID024648 Rev 4
7/21
AIS1200PS
Mechanical and electrical specifications
2
Mechanical and electrical specifications
2.1
Mechanical characteristics
VDD  5 V to VDD  16 V, TL  -40 °C to TH  125 °C, unless otherwise noted.
2.2
Electrical characteristics
TA  -40°C to TH  125 °C, unless otherwise noted(a)
Table 3. Mechanical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
FS
Full-scale range(2)
±200
g
So
Sensitivity
1.8
2
2.2
LSb/g
TCSo
Sensitivity change vs.
temperature
TA = 25°C
-5
5
%
TL  TA  TH
-10
10
Off
Zero-g level offset (1)
TA = 25°C
-26
0
26
LSb
TL  TA  TH
-54
0
54
NL
Non-linearity(2)
Best-fit straight line
-2
+2
% FS
Asym
Asymmetry(2)
-1.2
+1.2
%
CrAx
Cross axis(2)
-5
+5
%
F0
MEMS resonant frequency(2)
16.6
19.6
22.5
kHz
Top
Operating temperature range
-40
+125
°C
1. Zero-g level offset (10-bit representation) including aging and soldering effects.
2. Verified by characterization, not tested in production.
a. All voltage levels are referred to RTN
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Vbus
Supply voltage at BUSIN
5
16
V
IQ
Quiescent current(1)
24
7
mA
Id
Drift of quiescent current
(time gradient)(3)
±1
mA/
min
RNG
Output range
±200 g
-400
400
LSb
RNGmax Output range before clamp
-480
480
LSb
OutFF
Output frequency flatness
5 g @ freq 20, 30, 40 Hz(2)
-10
+10
%
IS
Data sink current
IQ
IQ+IS
mA
T
t
-------
0.5 C
s
-------



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