A

K

Product label

Features

•

No reverse recovery charge in application current range

•

Switching behavior independent of temperature

•

High forward surge capability

•

ECOPACK2 compliant component

•

Power efficient product

Applications

•

Switch mode power supply

•

PFC

•

"DC/DC" converters

•

LLC topologies

•

Boost diode

Description

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured

using a silicon carbide substrate. The wide band gap material allows the design of a

Schottky diode structure with a 650 V rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, the STPSC2H065 SiC diode will boost

performance in hard switching conditions.

Product status

STPSC2H065

Product summary

Symbol

Value

IF(AV)

2 A

VRRM

650 V

Tj(max.)

175 °C

VF(typ.)

1.38 V

650 V, 2 A high surge silicon carbide power Schottky diode

STPSC2H065

Datasheet

DS12989 - Rev 1 - April 2019

For further information contact your local STMicroelectronics sales office.

www.st.com