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L99VR01STR 데이터시트(PDF) 7 Page - STMicroelectronics |
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L99VR01STR 데이터시트(HTML) 7 Page - STMicroelectronics |
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7 / 47 page ![]() 2.2 Thermal data 2.2.1 Thermal resistance Table 3. Operation junction temperature Item Symbol Parameter Value Unit PowerSSO-12 SO-8 A.001 Rthj-case Junction to case thermal resistance 8.5 °C/W A.057 Rthj-lead Junction to lead thermal resistance (1) 54.5 °C/W A.002 Rthj-amb Junction to ambient thermal resistance 27.4 71 °C/W 1. Measured on Vs Note: the values quoted are for PCB 77 mm x 86 mm x 1.6 mm, FR4, four layers; Cu thickness 0.070 mm (outer layers) . Cu thickness 0.035 mm (inner layers), Thermal vias separation 1.2 mm, Thermal via diameter 0.3 mm +/- 0.08 mm, Cu thickness on vias 0.025 mm. 2.2.2 Thermal protection Table 4. Temperature threshold Item Symbol Parameter Test condition Min. Typ. Max. Unit A.003 Tprot_s(1) Thermal protection temperature L99VR01S 150 180 °C A.004 Tprot_j(1) Thermal protection temperature L99VR01J 175 200 °C A.005 Tprot_hyst Thermal protection hysteresis 11 °C A.006 TJ Operating junction temperature SO-8 TJ -40 150 °C Power-SSO-12 -40 175 A.007 Tstg Storage temperature Tstg 150 °C 1. Thermal protection is guaranteed by design and characterization. L99VR01 Thermal data DS13649 - Rev 3 page 7/47 |
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