DS11777 Rev 4

21/33

STA8089GAT

Electrical characteristics

32

Note:

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at

these or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to absolute maximum rating conditions for extended

periods may affect device reliability.

VESD-HBM

Electrostatic discharge, human body model(1).-2

2

kV

VESD-CDM

Electrostatic discharge, charge device model(2).

-250

250

V

1. Pins sustaining only ±500 V are: 12, 13, 21, 27, 28, 29, 30 and 31,

2. Pin 9 (LNA_IN) sustains only ±100 V.

Table 8. Voltage characteristics (continued)

Symbol

Parameter

Min.

Max.

Unit

Table 9. Thermal characteristics

Symbol

Parameter

Min.

Max.

Unit

Toper

Operative ambient temperature

-40

105

°C

Tj

Operative junction temperature

-40

125

°C

Tst

Storage temperature

-55

150

°C

Rj-amb

Thermal resistance junction to ambient(1)

1. According to JEDEC specification on a 2 layers board.

24.4

°C/W

Table 10. Frequency limits

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

FCLK

Operating ARM9 CPU frequency V

DDD =1.2 V;

TC =85 °C(1)

1. Not tested in production.

——

196

MHz

FAHB

AHB frequency

—

—

49

MHz

Table 11. Power consumption

Symbol

Parameter

Test condition

Min.

Typ.

Max. Unit

PRF

RFIP power (total VINL2)

G2 = GPS/Galileo;

Tamb =25 °C;

VINL2 =1.8 V

—25

—

mW

G2 + GLONASS;

Tamb =25 °C;

VINL2 =1.8 V

—35

—

mW

G2 + BeiDou;

Tamb =25 °C;

VINL2 =1.8 V

—35

—

mW