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STA8090WGR 데이터시트(PDF) 21 Page - STMicroelectronics |
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STA8090WGR 데이터시트(HTML) 21 Page - STMicroelectronics |
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21 / 32 page ![]() DS12835 Rev 1 21/32 STA8090WGR Electrical characteristics 31 4.6 Recommended DC operating conditions Table 13 lists the functional recommended operating DC parameters for STA8090WGR. PMVR Switchable area power; (total VINL1) fARM = 196 MHz; fAHB = 49 MHz; Tamb = 25 °C; VINL1 = 1.8 V; UART active; other peripherals inactive –90 – mW PLPVR Always ON area power (total VINB) fARM = 196 MHz; fAHB = 49 MHz; Tamb = 25 °C; VINB = 3.3 V –1 – mW PIO IO rings power (total VDDIO_R1 + VDDIO_R2) fARM = 196 MHz; fAHB = 49 MHz; Tamb = 25 °C; VINL1 = 1.8 V; UART active; other peripherals inactive –4 – mW IDStandby Standby mode supply current RTC running = 32.768 kHz; Tamb = 25 °C; VINB = 1.8 V —29 — μA IDDeepStandby Deep standby mode supply current(1) —7 — μA 1. STDBY_OUT pin not supported in deep standby. Table 12. Power consumption (continued) Symbol Parameter Test condition Min Typ Max Unit Table 13. Recommended DC operating conditions Symbol Parameter Min Typ Max Unit VCC_CHAIN Analog supply voltage for RF chain (1.2 V) 1.08 1.20 1.32 V VCC_PLL Analog supply voltage for PLL RF (1.2 V) 1.08 1.20 1.32 V VCC_RF Analog supply voltage for RF (1.2 V) 1.08 1.20 1.32 V VDD_SQI Digital supply voltage for SQI I/O ring (1.8 V) 1.71 1.80 1.89 V Digital supply voltage for SQI I/O ring (3.3 V) 3.00 3.30 3.60 V VDDD Power supply pins for the core logic. 1.00 1.10 1.32 V VDDIO_R1 Digital supply voltage for I/O ring 1 (1.8 V) 1.71 1.80 1.89 V Digital supply voltage for I/O ring 1 (3.3 V) 3.00 3.30 3.60 V VDDIO_R2 Digital supply voltage for I/O ring 2 (3.3 V) 3.00 3.30 3.60 V VINB Backup LDO input supply voltage (1.6 V to 4.3 V) 1.60 – 4.30 V VINL1 LDO1 input supply voltage to generate 1.8 V 2.10 – 4.30 V VINL2 LDO2 input supply voltage to generate 1.2 V 1.60 – 4.30 V VINM SMPS coil input supply voltage to generate 1.1 V 2.10 – 4.30 V |
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