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13N50DM2 데이터시트(PDF) 1 Page - STMicroelectronics |
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13N50DM2 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() 1 3 TAB 2 DPAK D(2, TAB) G(1) S(3) NG1D2TS3Z Features Order code VDS RDS(on ) max. ID STD13N50DM2AG 500 V 360 mΩ 11 A • AEC-Q101 qualified • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status STD13N50DM2AG Product summary Order code STD13N50DM2AG Marking 13N50DM2 Package DPAK Packing Tape and reel Automotive-grade N-channel 500 V, 320 mΩ typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package STD13N50DM2AG Datasheet DS12210 - Rev 4 - October 2019 For further information contact your local STMicroelectronics sales office. www.st.com |
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