PWD5F60 datasheet(10/26 Pages) STMICROELECTRONICS

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Device characterization values

Table 7., Table 8. and the electrical characteristics curves (from Figure 6. to Figure 15.) represent typical values

based on characterization and simulation results and are not subject to production tests.

Table 7. Power MOSFET characterization values

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

MOSFET Dynamic

Total gate charge

VGS = 10 V, TJ = 25 °C

VDS = 480 V, ID = 3.5 A

5.3

Source-Drain diode

trr

Diode reverse recovery time

ISD = 3.5 A, TJ = 25 °C

di/dt = 100 A/µs,

VDS = 60 V

Qrr

Diode reverse recovery charge

109

µC

IRRM

Diode reverse recovery current

trr

Diode reverse recovery time

ISD = 3.5 A, TJ = 150 °C

di/dt = 100 A/µs,

VDS = 60 V

109

Qrr

Diode reverse recovery charge

309

µC

IRRM

Diode reverse recovery current

Table 8. Inductive load switching characteristics

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

t(on) (1)

Turn-on time

VS = 300 V,

VCC = VBO = 15 V,

ID = 1.75 A

See Figure 5.

450

tC(on) (2)

Crossover time (on)

t(off) (1)

Turn-off time

171

tC(off) (2)

Crossover time (off)

tSD

Shutdown to high/low-side propagation delay

165

Eon

Turn-on switching losses

µJ

Eoff

Turn-off switching losses

µJ

1. t(on) and t(off) include the propagation delay time of the internal driver

2. tC(on) and tC(off) are the switching times of MOSFET itself under the internally given gate driving conditions

PWD5F60

Device characterization values

DS12543 - Rev 1

page 10/26

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