STP410N4F7AG datasheet(3/13 Pages) STMICROELECTRONICS

부품명	STP410N4F7AG

상세설명	Automotive-grade N-channel 40 V, 1.5 m typ., 180 A STripFET™ F7 Power MOSFET in a TO-220 package

PDF	13 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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STP410N4F7AG

Electrical ratings

DocID029380 Rev 1

3/13

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

VGS

Gate-source voltage

±20

ID(1)

Drain current (continuous) at Tcase = 25 °C

180

Drain current (continuous) at Tcase = 100 °C

180

IDM(2)

Drain current (pulsed)

720

PTOT

Total dissipation at Tcase = 25 °C

365

EAS(3)

Single pulse avalanche energy

1.9

Tstg

Storage temperature range

-55 to 175

°C

Operating junction temperature range

Notes:

(1) Current is limited by package, the current capability of the silicon is 350 A at 25 °C.

(2) Pulse width is limited by safe operating area.

(3)Tj ≤ 175 °C, Iav=80A

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.41

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

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