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K4M561633G-RBL 데이터시트(PDF) 6 Page - Samsung semiconductor

부품명 K4M561633G-RBL
상세설명  4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
PDF  12 Pages
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제조업체  SAMSUNG [Samsung semiconductor]
홈페이지  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4M561633G-RBL 데이터시트(HTML) 6 Page - Samsung semiconductor

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K4M561633G - R(B)N/G/L/F
January 2006
Mobile SDRAM
AC OPERATING TEST CONDITIONS(VDD = 2.7V ∼ 3.6V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial)
Parameter
Value
Unit
AC input levels (Vih/Vil)
2.4 / 0.4
V
Input timing measurement reference level
0.5 x VDDQ
V
Input rise and fall time
tr/tf = 1/1
ns
Output timing measurement reference level
0.5 x VDDQ
V
Output load condition
See Figure 2
VDDQ
1200
Ω
870
Ω
Output
30pF
VOH (DC) = 2.4V, IOH = -2mA
VOL (DC) = 0.4V, IOL = 2mA
Vtt=0.5 x VDDQ
50
Ω
Output
30pF
Z0=50
Ω
Figure 2. AC Output Load Circuit
Figure 1. DC Output Load Circuit



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