FDMS3604S

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3

ELECTRICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted

Symbol

Parameter

Column Head

Test Conditions

Type

Min

Typ

Max

Units

OFF CHARACTERISTICS

BVDSS

Drain to Source Breakdown

Voltage

ID = 250 mA, VGS = 0 V ID = 1 mA,

VGS = 0 V

Q1

Q2

30

30

V

DBVDSS /

DTJ

Breakdown Voltage Temperature

Coefficient

ID = 250 mA, referenced to 25°C

ID = 10 mA, referenced to 25°C

Q1

Q2

15

12

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V, VGS = 0 V

Q1

Q2

1

500

mA

IGSS

Gate to Source Leakage Current,

Forwad

VGS = 20 V, VDS= 0 V

Q1

Q2

100

100

nA

ON CHARACTERISTICS

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250 mA VGS = VDS,

ID = 1 mA

Q1

Q2

1.1

1.1

2

1.8

2.7

3

V

DVGS(th) /

DTJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 250 mA, referenced to 25°C

ID = 10 mA, referenced to 25°C

Q1

Q2

−6

−5

mV/°C

rDS(on)

Drain to Source On Resistance

VGS = 10 V, ID = 13 A VGS = 4.5 V,

ID = 11 A

VGS = 10 V, ID = 13 A , TJ = 125°C

Q1

5.8

8.5

7.8

8

11

10.8

mW

VGS = 10 V, ID = 23 A VGS = 4.5 V,

ID = 21 A

VGS = 10 V, ID = 23 A , TJ = 125°C

Q2

2.0

3.0

2.6

2.6

3.5

4

gFS

Forward Transconductance

VDS = 5 V, ID = 13 A VDS = 5 V, ID = 23 A

Q1

Q2

61

130

S

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

Q1:

VDS = 15 V, VGS = 0 V, f = 1 MHz

Q2:

VDS = 15 V, VGS = 0 V, f = 1 MHz

Q1

Q2

1340

3240

1785

4310

pF

Coss

Output Capacitance

Q1

Q2

485

1230

645

1635

pF

Crss

Reverse Transfer Capacitance

Q1

Q2

53

103

80

155

pF

Rg

Gate Resistance

Q1

Q2

0.2

0.2

0.6

0.8

2

3

W

SWITCHING CHARACTERISTICS

td(on)

Turn−On Delay Time

Q1:

VDD = 15 V, ID = 13 A, RGEN = 6 W

Q2:

VDD = 15 V, ID = 23 A, RGEN = 6 W

Q1

Q2

8.2

13

16

23

ns

tr

Rise Time

Q1

Q2

2.5

4.8

10

10

ns

td(off)

Turn−Off Delay Time

Q1

Q2

20

31

32

50

ns

tf

Fall Time

Q1

Q2

2.2

3.4

10

10

ns

Qg

Total Gate Charge

VGS = 0 V to 10 V

Q1

VDD = 15 V, ID = 13 A

Q2

VDD = 15 V, ID = 23 A

Q1

Q2

21

47

29

66

nC

Qg

Total Gate Charge

VGS = 0 V to 4.5 V

Q1

Q2

10

22

14

31

nC

Qgs

Gate to Source Gate Charge

Q1

Q2

3.9

9

nC

Qgd

Gate to Drain “Miller” Charge

Q1

Q2

3.1

5.5

nC