BC857BFZ

Document number: DS37158 Rev. 2 - 2

2 of 7

www.diodes.com

May 2015

© Diodes Incorporated

BC857BFZ

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-45

V

Emitter-Base Voltage

VEBO

-6.0

V

Continuous Collector Current

IC

-100

mA

Peak Pulse Collector Current

ICM

-200

mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 5)

PD

270

mW

(Note 6)

925

Thermal Resistance, Junction to Ambient

(Note 5)

RJA

465

°C/W

(Note 6)

135

Thermal Resistance, Junction to Lead

(Note 7)

RJL

135

°C/W



Operating and Storage and Temperature Range

TJ, TSTG

-55 to +150

°C

ESD Ratings (Note 8)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

200

V

B

Notes:

5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured

under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.

6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.

7. Thermal resistance from junction to solder-point (on the exposed collector pad).

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.