STW26N65DM2 datasheet(4/13 Pages) STMICROELECTRONICS

부품명	STW26N65DM2

상세설명	N-channel 650 V, 0.156 typ., 20 A, MDmesh™ DM2 Power MOSFET in a TO-247 package

PDF	13 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current (pulsed)

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 20 A

1.6

trr

Reverse recovery time

ISD = 20 A, di/dt = 100 A/µs,

VDD = 100 V

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

100

Qrr

Reverse recovery charge

0.365

µC

IRRM

Reverse recovery current

7.3

trr

Reverse recovery time

ISD = 20 A, di/dt = 100 A/µs,

VDD = 100 V, TJ = 150 °C

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

200

Qrr

Reverse recovery charge

1.39

µC

IRRM

Reverse recovery current

13.9

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

STW26N65DM2

Electrical characteristics

DS12622 - Rev 1

page 4/13

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