STWA63N65DM2 datasheet(4/12 Pages) STMICROELECTRONICS

부품명	STWA63N65DM2

상세설명	N-channel 650 V, 0.042 typ., 60 A MDmesh™ DM2 Power MOSFET in a TO-247 long leads package

PDF	12 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM (1)

Source-drain current (pulsed)

240

VSD (2)

Forward on voltage

VGS = 0 V, ISD = 60 A

1.6

trr

Reverse recovery time

ISD = 60 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 15. Test

circuit for inductive load switching and

diode recovery times)

154

Qrr

Reverse recovery charge

0.94

µC

IRRM

Reverse recovery current

12.2

trr

Reverse recovery time

ISD = 60 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C (see Figure

15. Test circuit for inductive load

switching and diode recovery times)

288

Qrr

Reverse recovery charge

3.65

µC

IRRM

Reverse recovery current

25.4

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%

STWA63N65DM2

Electrical characteristics

DS12555 - Rev 1

page 4/12

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