72N60DM6 datasheet(4/12 Pages) STMICROELECTRONICS

부품명	72N60DM6

상세설명	Automotive-grade N-channel 600 V, 37 m typ., 56 A, MDmesh DM6 Power MOSFET in a TO‑247 long leads package

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제조업체	STMICROELECTRONICS [STMicroelectronics]

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Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current (pulsed)

230

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 56 A

1.6

trr

Reverse recovery time

ISD = 56 A, di/dt = 100 A/μs,

VDD = 60 V

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

153

Qrr

Reverse recovery charge

0.9

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 56 A, di/dt = 100 A/μs,

VDD = 60 V, TJ = 150 °C

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

285

Qrr

Reverse recovery charge

3.4

µC

IRRM

Reverse recovery current

1. Pulse width is limited by safe operating area

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

STWA72N60DM6AG

Electrical characteristics

DS13286 - Rev 2

page 4/12

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