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STL10N65M2 데이터시트(PDF) 1 Page - STMicroelectronics |
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STL10N65M2 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() 1 2 3 4 PowerFLAT 5x6 HV AM15540v1 5 6 7 8 1 2 3 4 Top View D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code VDS RDS(on ) max. ID STL10N65M2 650 V 1.00 Ω 4.5 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STL10N65M2 Product summary Order code STL10N65M2 Marking 10N65M2 Package PowerFLAT 5x6 HV Packing Tape and reel N-channel 650 V, 0.85 Ω typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package STL10N65M2 Datasheet DS12063 - Rev 2 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com |
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