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STL26N65DM2 데이터시트(PDF) 1 Page - STMicroelectronics |
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STL26N65DM2 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() 5 1 2 3 4 PowerFLAT™ 8x8 HV NG1DS2PS34D5Z Drain(5) Gate(1) Driver source (2) Power source (3, 4) Features Order code VDS RDS(on) max. ID PTOT STL26N65DM2 650 V 0.206 Ω 20 A 140 W • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast- recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STL26N65DM2 Product summary Order code STL26N65DM2 Marking 26N65DM2 Package PowerFLAT™ 8x8 HV Packing Tape and reel N-channel 650 V, 0.182 Ω typ., 20 A, MDmesh™ DM2 Power MOSFET in a PowerFLAT™ 8x8 HV package STL26N65DM2 Datasheet DS12623 - Rev 1 - July 2018 For further information contact your local STMicroelectronics sales office. www.st.com |
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