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WFP830 데이터시트(PDF) 3 Page - Wisdom technologies Int`l

부품명 WFP830
상세설명  N-Channel MOSFET
PDF  7 Pages
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제조업체  WISDOM [Wisdom technologies Int`l]
홈페이지  http://www.wisdom-technologies.com/index.aspx
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WFP830 데이터시트(HTML) 3 Page - Wisdom technologies Int`l

  WFP830 Datasheet HTML 1Page - Wisdom technologies Int`l WFP830 Datasheet HTML 2Page - Wisdom technologies Int`l WFP830 Datasheet HTML 3Page - Wisdom technologies Int`l WFP830 Datasheet HTML 4Page - Wisdom technologies Int`l WFP830 Datasheet HTML 5Page - Wisdom technologies Int`l WFP830 Datasheet HTML 6Page - Wisdom technologies Int`l WFP830 Datasheet HTML 7Page - Wisdom technologies Int`l  
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0
3
6
9
12
15
1
2
3
4
5
6
V
GS = 20V
V
GS = 10V
Note : T
J = 25℃
I
D, Drain Current [A]
246
8
10
10
-1
10
0
10
1
150
oC
25
oC
-55
oC
Notes :
1. V
DS = 40V
2. 250µs PulseTest
V
GS, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top :
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
Bottom: 5.0V
Notes :
1. 250µs PulseTest
2. T
C = 25℃
V
DS, Drain-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
150℃
Notes :
1. V
GS = 0V
2. 250µs Pulse Test
25℃
V
SD, Source-Drain voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
0
4
8
1216
2024
28
0
2
4
6
8
10
12
V
DS = 250V
V
DS = 100V
V
DS = 400V
Note : I
D = 5.0 A
Q
G, Total Gate Charge [nC]
10
-1
10
0
10
1
0
300
600
900
1200
1500
1800
C
oss
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
Notes :
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
iss
V
DS, Drain-Source Voltage [V]



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