DMC4047LSD

Document number: DS36206 Rev. 4 - 2

3 of 9

www.diodes.com

November 2013

© Diodes Incorporated

DMC4047LSD

Electrical Characteristics P-Channel Q1 (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

-40





V

VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

IDSS





-1

µA

VDS = -40V, VGS = 0V

Gate-Source Leakage

IGSS





100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

-1.0



-2.2

V

VDS = VGS, ID = -250µA

Static Drain-Source On-Resistance

RDS(ON)



33

45

mΩ

VGS = -10V, ID = -5A



40

55

VGS = -4.5V, ID = -4A

Diode Forward Voltage

VSD



-0.7

-1.0

V

VGS = 0V, IS = -1.0A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss



1154



pF

VDS = -20V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss



84



Reverse Transfer Capacitance

Crss



66



Gate Resistance

RG



12.6



Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = -4.5V)

Qg



10.6



nC



VDS = -20V, ID = -4.9A

Total Gate Charge (VGS = -10V)

Qg



21.5



Gate-Source Charge

Qgs



2.2



Gate-Drain Charge

Qgd



3.3



Turn-On Delay Time

tD(on)



8.7



nS

VDS = -20V, ID = -3.9A

VGS = -4.5V, RG = 1Ω

Turn-On Rise Time

tr



19.6



Turn-Off Delay Time

tD(off)



34.9



Turn-Off Fall Time

tf



25.5



Body Diode Reverse Recovery Time

trr



9.61



nS

IS = -3.9A, dI/dt = 100A/μs

Body Diode Reverse Recovery Charge

Qrr



3.30



nC

IS = -3.9A, dI/dt = 100A/μs

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.