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DXT696BK 데이터시트(PDF) 2 Page - Diodes Incorporated

부품명 DXT696BK
상세설명  180V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN TO252
PDF  7 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
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DXT696BK 데이터시트(HTML) 2 Page - Diodes Incorporated

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DXT696BK
Document number: DS36574 Rev. 1 - 2
2 of 7
www.diodes.com
December 2013
© Diodes Incorporated
DXT696BK
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
180
V
Emitter-Base Voltage
VEBO
7
V
Continuous Collector Current
IC
0.5
A
Peak Pulse Current
ICM
1
A
Peak Base Current
IBM
0.5
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
3.9
W
(Note 6)
2.1
(Note 7)
1.6
Thermal Resistance, Junction to Ambient Air
(Note 5)
RθJA
32
C/W
(Note 6)
59
(Note 7)
80
Thermal Resistance, Junction to Leads
(Note 8)
RθJL
8.4
Thermal Resistance, Junction to Case
(Note 9)
RθJC
14.6
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
C
ESD Ratings (Note 10)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
5. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as note (5), except mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except mounted on minimum recommended pad (MRP) layout.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Thermal resistance from junction to the top of the case.
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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