PI3DPX1203

A product Line of

Diodes Incorporated

13 of 43

www.diodes.com

February 2021

© Diodes Incorporated

PI3DPX1203

Document number DS40598 Rev 2-2

6. Electrical Specification

6.1 Absolute Maximum Ratings

Storage Temperature ..........................................................................................................................................–65 °C to +150 °C

Supply Voltage to Ground Potential....................................................................................................................–0.5 V to +4.6 V

DC SIG Voltage............................................................................................................................................–0.5 V to VDD + 0.5 V

Output Current.................................................................................................................................................–25 mA to +25 mA

Power Dissipation Continuous............................................................................................................................................1.63 W

ESD, HBM ................................................................................................................................................................–2 kV to +2 kV

Maximum junction Temperature.........................................................................................................................................125 °C

Note:

Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation

of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maxi-

mum rating conditions for extended periods may affect reliability.

6.2 Recommended Operating Conditions(1)

Parameter(1)

Min.

Typ.

Max

Units

Power supply voltage (VDD to GND)

3.0

3.3

3.6

V

Supply Noise Tolerance (from 100KHz to 10MHz)

100

mVp-p

Ambient Temperature

-40

25

85

oC

(1) Typical parameters are measured at VCC = 3.3 ± 0.3V, TA = 25°C. They are for reference purposes, and are not production-tested

6.3 Power Consumption

Symbol

Parameter

Conditions

Min.

Typ.

Max

Units

VDD

Power supply voltage

3.0

3.3

3.6

V

IDD

Power supply current

SW[1:0]=11, VDD = 3.6 V

260

360

mA

IDDQ

Standby current

All other control pins are open

2.0

4.2

mA

6.4 AC/DC Characteristics

6.4.1 LVCMOS I/O DC Specifications

Symbol

Parameter

Conditions

Min.

Typ.

Max

Units

VIH

DC input logic HIGH

VDD/2 +

0.7

VDD + 0.3

V

VIL

DC input logic LOW

-0.3

VDD/2 -

0.7

V

VOH

At IOH = -200 µA

VDD + 0.2

V

VOL

At IOL = -200 µA

0.2

V

Vhys

Hysteresis of Schmitt trigger input

0.8

V