STM4435 datasheet(3/8 Pages) SAMHOP

부품명	STM4435

상세설명	P-Channel E nhancement Mode Field Effect Transistor

PDF	8 Pages

Scroll/Zoom	100%

제조업체	SAMHOP [SamHop Microelectronics Corp.]

홈페이지	http://www.samhop.com.tw

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3 / 8 page

S T M4435

Parameter

S ymbol

Condition

Min Typ Max Unit

E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)

DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS

Diode Forward Voltage

VSD

VGS = 0V, Is =-1.7A

-0.75 -1.2

Notes

a.Surface Mounted on FR4 Board, t <=10sec.

c.Guaranteed by design, not subject to production testing.

b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%.

F igure 1. Output C haracteristics

F igure 2. Transfer C haracteristics

-V GS , G ate-to-S ource Voltage (V )

-V DS , Drain-to-S ource Voltage (V )

0.5

1.0

1.5

2.0

2.5

3.0

25 C

-55 C

125 C

0.6

3.6

3.0

2.4

1.8

1.2

-V G S =2.5V

-V G S =4V

-V G S =3V

-V G S =4.5V

-V G S =10V

F igure 4. On-R esistance Variation with

Drain C urrent and Temperature

-ID, Drain C urrent (A)

T j( C )

T j, J unction T emperature ( C )

F igure 3. On-R esistance vs. Drain C urrent

and G ate V oltage

V GS =-10V

V GS =-4.5V

2.0

1.8

1.6

1.4

1.2

1.0

125

100

V GS =-10V

ID=-8A

150

V GS =-4.5V

ID=-5A

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