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2ST2480 데이터시트(PDF) 3 Page - STMicroelectronics |
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2ST2480 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() Obsolete Product(s) - Obsolete Product(s) 2ST1480, 2ST2480 Electrical characteristics Doc ID 16380 Rev 1 3/7 2 Electrical characteristics Tcase = 25 °C; unless otherwise specified. Note: For PNP type voltage and current are negative. 2.1 Electrical characteristic (curves) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCE = 80 V 30 µA IEBO Emitter cut-off current (IC = 0) VEB = 5 V 100 µA V(BR)CEO (1) 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % Collector-emitter breakdown voltage (IB = 0) IC = 50 mA 80 V VCE(sat) (1) Collector-emitter saturation voltage IC = 3 A IB = 300 mA 0.4 V VBE(on) (1) Base-emitter on voltage IC = 3 A VCE = 5 V 0.8 1 V hFE (1) DC current gain IC = 0.5 A VCE = 5 V for 2ST1480 for 2ST2480 IC = 3 A VCE = 5 V 120 120 15 240 300 fT Transition frequency IC = 0.5 A_ VCE = 5 V 130 MHz CCBO Collector-base capacitance (IE = 0) VCB = 10 V f = 1 MHz 60 pF Figure 2. Safe operating area Figure 3. Derating curve |
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